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Proceedings Paper

Minimizing CD measurement bias through real-time acquisition of 3D feature shapes
Author(s): Johann Foucher; Dmitry Gorelikov; Marc Poulingue; Pascal Fabre; Ganesh Sundaram
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Paper Abstract

CD measurement bias has long been reported as an inherent artifact of CD-SEM measurements. However, as feature dimensions decrease and line-to-space ratios increase, the magnitude of previously acceptable levels of measurement bias requires re-examination. Traditional attempts at correcting the bias has entailed slow, destructive or laborious techniques, such as comparisons of top-down CD-SEM measurements using standard algorithms with cross-section information, or correlating top-down data with complex tilted images. In this paper we expand the application of Critical Shape Metrology - a physics-based metrology technique for 3-D profile acquisition based on CD-SEM, to minimizing CD bias in real-time for a variety of feature dimensions and profiles. Samples used for the experiments were fabricated through E-Beam lithography and 193 lithography with a wide variation of sidewall angles and CDs, so that the measurement bias could be assessed over a sufficiently large range of patterned shapes. Reference measurements were performed using a CD-AFM and FIB-SEM

Paper Details

Date Published: 24 March 2006
PDF: 10 pages
Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 61521A (24 March 2006); doi: 10.1117/12.660233
Show Author Affiliations
Johann Foucher, CEA-LETI (France)
Dmitry Gorelikov, Soluris Inc. (United States)
Marc Poulingue, Soluris Inc. (United States)
Pascal Fabre, Soluris Inc. (United States)
Ganesh Sundaram, Soluris Inc. (United States)

Published in SPIE Proceedings Vol. 6152:
Metrology, Inspection, and Process Control for Microlithography XX
Chas N. Archie, Editor(s)

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