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Proceedings Paper

Negative nanomolecular resists based on calix[4]resorcinarene
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Paper Abstract

Negative working nanomolecular resists based on fully epoxy-protected tetra-Cmethylcalix[4]resorcinarene (epoxy C-4-R) and oxetanyl-protected tetra-methylcalix[4]resocinarene (oxetanyl C-4-R) have been developed. They were prepared by the reaction of C-4-R with epichlorohydrin or in the presence of trimethylamine. They can be coated on the silicon wafer by spin-coating method. A clear film cast from a 20 wt% epoxy C-4-R solution in chloroform showed high transparency to UV above 300 nm. A fine negative image featuring 0.8 μm of minimum line and space patterns was observed on the film of the photoresist exposed to 40 mJ/ cm2 of Near UV-light by the contact mode.

Paper Details

Date Published: 29 March 2006
PDF: 10 pages
Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61532G (29 March 2006); doi: 10.1117/12.660111
Show Author Affiliations
Tae-Hwan Oh, Korea Advanced Institute of Science and Technology (South Korea)
Ramakrishnan Ganesan, Korea Advanced Institute of Science and Technology (South Korea)
Je-Moon Yoon, Korea Advanced Institute of Science and Technology (South Korea)
Jin-Baek Kim, Korea Advanced Institute of Science and Technology (South Korea)


Published in SPIE Proceedings Vol. 6153:
Advances in Resist Technology and Processing XXIII
Qinghuang Lin, Editor(s)

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