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Proceedings Paper

Nano-imprint of sub-100nm dots and lines feature on 8-inch wafer: influence of layout design
Author(s): S. Landis; Tanguy Leveder; N. Chaix; C. Perret; Cécile Gourgon
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Paper Abstract

Sub 100 nm resolution on 200 mm silicon stamp have been hot embossed into commercial Sumitomo NEB 22 resist. A single dot pattern, exposed with electron beam lithography, has been considered to define the stamp and make thus possible to point out the impact of stamp design onto the printing. Moreover, more complex shapes (triangular, elliptic, random...) with sub 200 nm resolution with and without uniform surrounding frame have been also designed. A large scale of initial resist thickness, from 56 nm to 506 nm, has been printed to assess the effect of polymer flow properties onto the stamp cavities filling and the printed defects. The impact of the pattern symmetry breakdown onto defect generation is clearly shown in this paper in the printed areas as well as in the unprinted areas.

Paper Details

Date Published: 24 March 2006
PDF: 10 pages
Proc. SPIE 6151, Emerging Lithographic Technologies X, 61512L (24 March 2006); doi: 10.1117/12.659810
Show Author Affiliations
S. Landis, CEA-DRT-LETI-CEA/GRE (France)
Tanguy Leveder, CEA-DRT-LETI-CEA/GRE (France)
N. Chaix, CNRS-LTM (France)
C. Perret, CNRS-LTM (France)
Cécile Gourgon, CNRS-LTM (France)

Published in SPIE Proceedings Vol. 6151:
Emerging Lithographic Technologies X
Michael J. Lercel, Editor(s)

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