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Proceedings Paper

The capability of a 1.3-NA μstepper using 3D EMF mask simulations
Author(s): Will Conley; Jeff Meute; James Webb; Douglas Goodman; Robert Maier
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Paper Abstract

Lithographic methods of imaging in resist can be extended with the addition of immersion fluid. The higher index of refraction fluid can be used to print smaller features by increasing the numerical aperture beyond the limits of dry lithography. Alternately, an immersion optical system can achieve a larger depth of focus at the same numerical aperture as the equivalent dry lithography system. When numerical apertures are significantly greater than 1.0, polarization effects start to impact resolution seriously. Special illumination conditions will be used to extend resolution limits. Additional factors that affect imaging in resist need to be included if we are to achieve new resolution limits using high index of refraction materials to increase numerical apertures. In addition to material inhomogeneities, birefringence and optical surface effects, material absorption, coatings and index differences at boundaries will have a larger impact on image resolution as ray angles in the imaging system continue to increase with numerical aperture. Aerial and resist imaging effects that material characteristics have on polarization, uniformity and aberrations in the lens pupil will be studied.

Paper Details

Date Published: 21 March 2006
PDF: 10 pages
Proc. SPIE 6154, Optical Microlithography XIX, 61542Y (21 March 2006); doi: 10.1117/12.659684
Show Author Affiliations
Will Conley, Freescale Semiconductor, Inc. (United States)
SEMATECH (United States)
Jeff Meute, IBM (United States)
SEMATECH (United States)
James Webb, Corning Tropel Corp. (United States)
Douglas Goodman, Corning Tropel Corp. (United States)
Robert Maier, Corning Tropel Corp. (United States)

Published in SPIE Proceedings Vol. 6154:
Optical Microlithography XIX
Donis G. Flagello, Editor(s)

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