Proceedings Paper
Dense OPC and verification for 45nm| Format | Member Price | Non-Member Price |
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Paper Abstract
In this paper, we expand on previous work in which we investigated algorithms and cost functions for dense OPC. We explore using multiple contours at different process conditions in order to generate "process window OPC". We analyze and discuss the computational cost of the dense OPC approach in comparison to sparse OPC. We also discuss the flexibility to use any possible resist model inside a dense OPC system. We show how the dense OPC system can be used together with dense, contour-based verification for the 45nm node. The dense verification and OPC tools provide a framework for lithography friendly design and DFM for the 45nm manufacturing node.
Paper Details
Date Published: 15 March 2006
PDF: 6 pages
Proc. SPIE 6154, Optical Microlithography XIX, 61540I (15 March 2006); doi: 10.1117/12.659449
Published in SPIE Proceedings Vol. 6154:
Optical Microlithography XIX
Donis G. Flagello, Editor(s)
PDF: 6 pages
Proc. SPIE 6154, Optical Microlithography XIX, 61540I (15 March 2006); doi: 10.1117/12.659449
Show Author Affiliations
Nicolas Cobb, Mentor Graphics Corp. (United States)
Dragos Dudau, Mentor Graphics Corp. (United States)
Published in SPIE Proceedings Vol. 6154:
Optical Microlithography XIX
Donis G. Flagello, Editor(s)
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