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Proceedings Paper

High transmission mask technology for 45nm node imaging
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Paper Abstract

Today novel RET solutions are gaining more and more attention from the lithography community that is facing new challenges in attempting to meet the new requirement of the SIA roadmap. Immersion, high NA, polarization, and mask topography, are becoming common place terminology as lithographers continue to explore these areas. Here with, we compare a traditional 6% MoSi based EAPSM reticle and a high transmission solution made of a SiON/Cr film stack. Insights into the manufacturability of high transmission material are provided. Test patterns have been analyzed to determine the overall impact of imaging performance when used with immersion scanners and polarized light. Some wafer results provide reliability of simulations, which are used to make further investigation on polarization and immersion effects.

Paper Details

Date Published: 15 March 2006
PDF: 10 pages
Proc. SPIE 6154, Optical Microlithography XIX, 61541D (15 March 2006); doi: 10.1117/12.659390
Show Author Affiliations
Will Conley, Freescale Semiconductor, Inc. (United States)
Nicoló Morgana, Photronics, Inc. (France)
Bryan S. Kasprowicz, Photronics, Inc. (United States)
Mike Cangemi, Photronics, Inc. (United States)
Matt Lassiter, Photronics, Inc. (France)
Lloyd C. Litt, Freescale Semiconductor, Inc. (United States)
Marc Cangemi, Photronics, Inc. (United States)
Rand Cottle, Photronics, Inc. (United States)
Wei Wu, Freescale Semiconductor, Inc. (United States)
Jonathan Cobb, Freescale Semiconductor, Inc. (United States)
Young-Mog Ham, Photronics, Inc. (United States)
Kevin Lucas, Freescale Semiconductor, Inc. (France)
Bernie Roman, Freescale Semiconductor, Inc. (United States)
Chris Progler, Photronics, Inc. (United States)

Published in SPIE Proceedings Vol. 6154:
Optical Microlithography XIX
Donis G. Flagello, Editor(s)

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