ZnO and N-doped ZnO thin films were grown by MOCVD on sapphire and ZnO substrates. Diethyl zinc and O₂ were used as sources for Zn and O, respectively. A specially designed plasma system was employed to produce atomic N dopant for in-situ doping. Proper disk rotation speeds were found for ZnO growth on different size wafers. High crystal quality N-doped ZnO films were grown based on optimized growth conditions. Wet chemical etch of ZnO was investigated by using NH₄Cl, and etch activation energy was calculated to be 463meV. Ohmic contact on N-doped ZnO film was achieved by using Ni/Au/Al multiple layers. ZnO based p-n junction has demonstrated rectification. Electroluminescence at about 384nm was obtained from ZnO based LED.

Date Published: 2 March 2006
PDF: 6 pages
Proc. SPIE 6122, Zinc Oxide Materials and Devices, 61220M (2 March 2006); doi: 10.1117/12.659240

Published in SPIE Proceedings Vol. 6122:
Zinc Oxide Materials and Devices
Ferechteh Hosseini Teherani; Cole W. Litton, Editor(s)