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Proceedings Paper

Defect marginality screen for resists patterned in random bright-field layout
Author(s): David Fryer; Vivek Singh; Andrew Muray; Sushil Dhoot; Sam Sivakumar
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Paper Abstract

Resists with robust defect margins for bright field patterning are critical to high resolution lithography. In this paper, we present the application of analytical techniques to screen high resolution photoresists with reduced tendency to form side-lobe defects from diffraction in ePSM and chromeless APSM lithography. Resist candidates are compared based on a novel method to determine accurate high-contrast development etch rate curve data from diluted normality analysis combined with attenuated FTIR. The measured data is applied to determine parameters for aerial image and molecular level resist models which screen potential resists for performance in side-lobe suppression within random mask layout. Feature level prediction and experimental validation is discussed as well as general selection criteria for high resolution, low-defect liability resist materials for severe bright field ePSM and APSM lithography.

Paper Details

Date Published: 29 March 2006
PDF: 5 pages
Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61530U (29 March 2006); doi: 10.1117/12.658060
Show Author Affiliations
David Fryer, Intel Corp. (United States)
Vivek Singh, Intel Corp. (United States)
Andrew Muray, Intel Corp. (United States)
Sushil Dhoot, Intel Corp. (United States)
Sam Sivakumar, Intel Corp. (United States)

Published in SPIE Proceedings Vol. 6153:
Advances in Resist Technology and Processing XXIII
Qinghuang Lin, Editor(s)

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