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Proceedings Paper

Deep UV AlGaN light emitting diodes grown by gas source molecular beam epitaxy on sapphire and AlGaN/sapphire substrates
Author(s): S. Nikishin; B. Borisov; V. Kuryatkov; A. Usikov; V. Dmitriev; M. Holtz
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Paper Abstract

We report the electrical and optical properties of deep ultraviolet light emitting diodes (LEDs) based on digital alloy structures (DAS) of AlN/Al0.08Ga0.92N grown by gas source molecular beam epitaxy with ammonia on sapphire substrates and AlGaN/sapphire templates. AlGaN/sapphire templates were grown by recently developed stress controlled hydride vapor phase epitaxy (HVPE). For DAS with effective bandgap of 5.1 eV we obtain room temperature electron concentrations up to 1x1019 cm-3 and hole concentrations of 1x1018 cm-3. Based on these results we prepared double heterostructure (DHS) LEDs operating in the range of 250 to 290 nm. The emission wavelengths were controlled through the effective bandgap of the active region. The possible ways for increase of LED's efficiency are discussed. We observed significant improvement in the room temperature luminescence efficiency (by factor of 100) of AlGaN quantum wells when a transition growth mode is induced by reduced flux of ammonia. We found that active layer grown on HVPE AlGaN/sapphire substrates have higher luminescence efficiency (by factor of 3) than DAS grown on sapphire.

Paper Details

Date Published: 3 March 2006
PDF: 16 pages
Proc. SPIE 6121, Gallium Nitride Materials and Devices, 61210T (3 March 2006); doi: 10.1117/12.657921
Show Author Affiliations
S. Nikishin, Texas Tech Univ. (United States)
B. Borisov, Texas Tech Univ. (United States)
V. Kuryatkov, Texas Tech Univ. (United States)
A. Usikov, TDI, Inc. (United States)
V. Dmitriev, TDI, Inc. (United States)
M. Holtz, Texas Tech Univ. (United States)

Published in SPIE Proceedings Vol. 6121:
Gallium Nitride Materials and Devices
Cole W. Litton; James G. Grote; Hadis Morkoc; Anupam Madhukar, Editor(s)

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