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Proceedings Paper

Improvement of OPC accuracy for 65nm node contact using KIF
Author(s): Te Hung Wu; C. L. Lin; Ming Jui Chen; Zen Hsiang Tsai; Chen Yu Ao; H. C. Thuang; Jian Shin Liou; Chuen Huei Yang; Ling Chieh Lin
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Paper Abstract

Decreasing k1 factors require improved empirical models for the most critical challenge at 65nm node, contact holes especially. These requirements are reflected in the need for increasingly accurate lithography contour simulations. One of the major contributors to final OPC accuracy is the quality of the optical model. In this study, a new approach to the calibration of an optical model by using KIF will be proposed based upon the real through scanners and steppers of illumination distribution and implement to the OPC kernel.

Paper Details

Date Published: 15 March 2006
PDF: 5 pages
Proc. SPIE 6155, Data Analysis and Modeling for Process Control III, 61550M (15 March 2006); doi: 10.1117/12.657900
Show Author Affiliations
Te Hung Wu, United Microelectronics Corp. (Taiwan)
C. L. Lin, United Microelectronics Corp. (Taiwan)
Ming Jui Chen, United Microelectronics Corp. (Taiwan)
Zen Hsiang Tsai, United Microelectronics Corp. (Taiwan)
Chen Yu Ao, United Microelectronics Corp. (Taiwan)
H. C. Thuang, United Microelectronics Corp. (Taiwan)
Jian Shin Liou, United Microelectronics Corp. (Taiwan)
Chuen Huei Yang, United Microelectronics Corp. (Taiwan)
Ling Chieh Lin, United Microelectronics Corp. (Taiwan)

Published in SPIE Proceedings Vol. 6155:
Data Analysis and Modeling for Process Control III
Iraj Emami; Kenneth W. Tobin Jr., Editor(s)

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