Decreasing k1 factors require improved empirical models for the most critical challenge at 65nm node, contact holes especially. These requirements are reflected in the need for increasingly accurate lithography contour simulations. One of the major contributors to final OPC accuracy is the quality of the optical model. In this study, a new approach to the calibration of an optical model by using KIF will be proposed based upon the real through scanners and steppers of illumination distribution and implement to the OPC kernel.

Date Published: 15 March 2006
PDF: 5 pages
Proc. SPIE 6155, Data Analysis and Modeling for Process Control III, 61550M (15 March 2006); doi: 10.1117/12.657900

Published in SPIE Proceedings Vol. 6155:
Data Analysis and Modeling for Process Control III
Iraj Emami; Kenneth W. Tobin Jr., Editor(s)