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Proceedings Paper

Mask process variation induced OPC accuracy in sub-90nm technology node
Author(s): Se-Jin Park; Yeon-Ah Shim; Jae-Hyun Kang; Jae-Young Choi; Kyung-Hee Yoon; Yong-Suk Lee; Keeho Kim
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Paper Abstract

Since an OPC engine makes model to fit wafer printed CD of OPC test mask to simulation CD of test pattern layout, the target CD of OPCed mask is not design CD but the CD of OPC test mask. So, the CD difference between OPC test mask and OPCed mask is one of the most important error source of OPC. We experimentally obtained OPC CD error of several patterns such as iso line, iso space, dense line, line end, effected by the mask MTT (mean to target) difference of the two masks on of 90nm logic pattern with an ArF attenuated mask having designed different MTT. The error is compared to simulated data that is calculated with MEEF (mask error enhancement factor) and EL (exposure latitude) data of these patterns. The good agreement of the experimental and calculated OPC error effected mask MTT error can make OPC error are predicted by mask CD error. Using by these calculation, we made mask CD window to meet OPC spec for 90nm ArF process.

Paper Details

Date Published: 20 March 2006
PDF: 8 pages
Proc. SPIE 6154, Optical Microlithography XIX, 61543K (20 March 2006); doi: 10.1117/12.657036
Show Author Affiliations
Se-Jin Park, DongbuAnam Semiconductor Inc. (South Korea)
Yeon-Ah Shim, DongbuAnam Semiconductor Inc. (South Korea)
Jae-Hyun Kang, DongbuAnam Semiconductor Inc. (South Korea)
Jae-Young Choi, DongbuAnam Semiconductor Inc. (South Korea)
Kyung-Hee Yoon, DongbuAnam Semiconductor Inc. (South Korea)
Yong-Suk Lee, DongbuAnam Semiconductor Inc. (South Korea)
Keeho Kim, DongbuAnam Semiconductor Inc. (South Korea)

Published in SPIE Proceedings Vol. 6154:
Optical Microlithography XIX
Donis G. Flagello, Editor(s)

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