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Proceedings Paper

Aerial-image modeling for the extreme ultraviolet microfield exposure tool at SEMATECH North
Author(s): Patrick Naulleau; Kim Dean; Klaus Lowack
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Paper Abstract

The availability of high resolution, low line-edge roughness, high sensitivity resists has recently been determined to be one of the most critical issues for the development of extreme ultraviolet (EUV) lithography. To address this issue, a series of 0.3 numerical aperture EUV microfield exposure tools (METs) has been developed. One of these tools is installed at SEMATECH North as part of its EUV Resist Test Center. The MET will be used as a resist evaluation tool and potentially as a mask evaluation tool; it is important to have an accurate knowledge of the aerial-image performance limits of the tool. Such knowledge enables the user to decouple optic effects from the resist and mask architecture effects being studied. Based on wavefront data provided by Zeiss (the manufacturer of the optic) and the lithographically measured flare data, PROLITH modeling is used to predict system performance under a variety of conditions.

Paper Details

Date Published: 24 March 2006
PDF: 8 pages
Proc. SPIE 6151, Emerging Lithographic Technologies X, 61512T (24 March 2006); doi: 10.1117/12.657001
Show Author Affiliations
Patrick Naulleau, SUNY/Albany (United States)
Kim Dean, SEMATECH (United States)
Klaus Lowack, SEMATECH North (United States)

Published in SPIE Proceedings Vol. 6151:
Emerging Lithographic Technologies X
Michael J. Lercel, Editor(s)

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