Share Email Print

Proceedings Paper

Flare effect of different shape of illumination apertures in 193-nm optical lithography system
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Flare has been important variable to obtain good CD control in the resolution limited lithography area such as sub-90 nm node. So far, many papers have been reported about how to measure flare and how flare impact on CD control. And some papers have tried to understand theoretical mechanism of flare. However, we expect that the illumination apertures such as the partial coherence factors or the modified illumination aperture shapes would also give impact on the flare. The short-range flare is changing as the open ratio variation on the mask. We assume that the illumination aperture shape change will also give similar effect as the open ratio variation on the mask. In this paper, we will show how the illumination aperture shapes give effect on short-range flare. Experiments were done for 100 nm lines surrounded by clear window having different width from 1 μm to 20 μm. We utilized the 193 nm scan-and-step exposure tool with the partially coherent conventional and off-axis illuminations apertures. In conclusion, we will prove the relationship between flare and illumination apertures.

Paper Details

Date Published: 20 March 2006
PDF: 7 pages
Proc. SPIE 6154, Optical Microlithography XIX, 615435 (20 March 2006); doi: 10.1117/12.656999
Show Author Affiliations
Young-Je Yun, DongbuAnam Semiconductor (South Korea)
Ju-Hyung Moon, DongbuAnam Semiconductor (South Korea)
Haeng-Leem Jeon, DongbuAnam Semiconductor (South Korea)
Jea-Hee Kim, DongbuAnam Semiconductor (South Korea)
Keeho Kim, DongbuAnam Semiconductor (South Korea)

Published in SPIE Proceedings Vol. 6154:
Optical Microlithography XIX
Donis G. Flagello, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?