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Proceedings Paper

Heterogeneous diffusion model for simulation of resist process
Author(s): Chang Moon Lim; Jun Taek Park; Seo Min Kim; Hyeong Soo Kim; Seung Chan Moon
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Paper Abstract

There have been imposed quite incompatible requirements on lithographic simulation tool for OPC, that is it should be enough accurate and enough fast. Though diffused aerial image model (DAIM) has achieved these goals successfully, rapid transition of lithography into very low k1 and sub-resolution regime makes it very difficult to meet these goals without loss of any of speed or accuracy. In this paper we suggested new modeling method of resist process which is called heterogeneous diffusion of aerial image. First, various examples of CD discrepancy between experiment and simulation with DAIM are suggested. Then the theoretical background of new model is explained and finally CD prediction performance of new model is demonstrated in 60nm 0.29k1 patterning of real DRAM devices. Improved CD prediction capability of new model is observed in various critical patterning of DRAM.

Paper Details

Date Published: 20 March 2006
PDF: 7 pages
Proc. SPIE 6154, Optical Microlithography XIX, 61542S (20 March 2006); doi: 10.1117/12.656923
Show Author Affiliations
Chang Moon Lim, Hynix Semiconductor Inc. (South Korea)
Jun Taek Park, Hynix Semiconductor Inc. (South Korea)
Seo Min Kim, Hynix Semiconductor Inc. (South Korea)
Hyeong Soo Kim, Hynix Semiconductor Inc. (South Korea)
Seung Chan Moon, Hynix Semiconductor Inc. (South Korea)

Published in SPIE Proceedings Vol. 6154:
Optical Microlithography XIX
Donis G. Flagello, Editor(s)

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