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Proceedings Paper

High-power pulsed CO2 laser for EUV lithography
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Paper Abstract

Laser produced plasma is the candidate for high quality, 115 W EUV light source for the next generation lithography. Cost effective laser driver is the key requirement for the realization of the concept as a viable scheme. A CO2 laser driven LPP system with a Xenon or Tin droplet target, is therefore a promising light source alternative. We are developing a high power and high repetition rate CO2 laser system to achieve 10 W intermediate focus EUV power. High conversion efficiency (CE) from the laser energy to EUV in-band energy, is the primarily important issue for the concept to be realized. Experimental and numerical simulation analysis of a Xenon plasma target shows that a short laser pulse less than 15 ns is necessary to obtain high CE by a CO2 laser. This paper describes on the development of a CO2 laser system with a short pulse length less than 15 ns, a nominal average power of a few kW, and a repetition rate of 100 kHz based on RF-excited, axial flow CO2 laser amplifiers. Output power of 1 kW has been achieved with a pulse length 15 ns at 100 kHz repletion rate in a small signal amplification condition. The phase distortion during the amplification is negligible and the beam is focused down to 100μm diameter onto a fast Xenon jet. The conceptual design of the CO2 laser system for LPP EUV light source, and amplification performance in short pulse using RF-excited axial flow laser as amplifiers, are reported. Additional approach to increase the amplification efficiency is discussed.

Paper Details

Date Published: 24 March 2006
PDF: 8 pages
Proc. SPIE 6151, Emerging Lithographic Technologies X, 61513M (24 March 2006); doi: 10.1117/12.656804
Show Author Affiliations
Tatsuya Ariga, Extreme Ultraviolet Lithography System Development Association (Japan)
Hideo Hoshino, Extreme Ultraviolet Lithography System Development Association (Japan)
Taisuke Miura, Extreme Ultraviolet Lithography System Development Association (Japan)
Akira Endo, Extreme Ultraviolet Lithography System Development Association (Japan)

Published in SPIE Proceedings Vol. 6151:
Emerging Lithographic Technologies X
Michael J. Lercel, Editor(s)

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