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### Proceedings Paper

EUV testing of multilayer mirrors: critical issues
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Paper Abstract

Recently, while performing extensive EUV irradiation endurance testing on Ru-capped multilayer mirrors in the presence of elevated partial pressures of water and hydrocarbons, NIST has observed that the amount of EUV-induced damage actually decreases with increasing levels of water vapor above ~5x10-7 Torr. It is thought that the admitted water vapor may interact with otherwise stable, condensed carbonaceous species in an UHV vacuum system to increase the background levels of simple gaseous carbon-containing molecules. Some support for this hypothesis was demonstrated by observing the mitigating effect of very small levels of simple hydrocarbons with the intentional introduction of methyl alcohol in addition to the water vapor. It was found that the damage rate decreased by at least an order of magnitude when the partial pressure of methyl alcohol was just one percent of the water partial pressure. These observations indicate that the hydrocarbon components of the vacuum environment under actual testing conditions must be characterized and controlled to 10-11 Torr or better in order to quantify the damage caused by high levels of water vapor. The possible effects of exposure beam size and out-of-band radiation on mirror lifetime testing will also be discussed.

Paper Details

Date Published: 23 March 2006
PDF: 9 pages
Proc. SPIE 6151, Emerging Lithographic Technologies X, 61510F (23 March 2006); doi: 10.1117/12.656502
Show Author Affiliations
S. B. Hill, National Institute of Standards and Technology (United States)
I. Ermanoski, National Institute of Standards and Technology (United States)
S. Grantham, National Institute of Standards and Technology (United States)
C. Tarrio, National Institute of Standards and Technology (United States)
T. B. Lucatorto, National Institute of Standards and Technology (United States)
T. E. Madey, Rutgers Univ. (United States)
S. Bajt, Lawrence Livermore National Lab. (United States)
M. Chandhok, Intel Corp. (United States)
P. Yan, Intel Corp. (United States)
O. Wood, SEMATECH (United States)
S. Wurm, SEMATECH (United States)
N. V. Edwards, SEMATECH (United States)

Published in SPIE Proceedings Vol. 6151:
Emerging Lithographic Technologies X
Michael J. Lercel, Editor(s)