Proceedings Paper
Optimization of contact hole lithography for 65-nm node logic LSI| Format | Member Price | Non-Member Price |
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Paper Abstract
Patterning of contact/via is a difficult issue for the optical lithography for each successive generation of LSIs. We examined a number of approaches to obtain a large process window and found that a dry ArF exposure tool with a large depth of focus (DOF) can form 100 nm contact holes. Our experimental results show that enough DOF can be obtained for various layouts by using sub-resolution assist feature (SRAF) technology and a unique illumination technology.
Paper Details
Date Published: 20 March 2006
PDF: 8 pages
Proc. SPIE 6154, Optical Microlithography XIX, 61543T (20 March 2006); doi: 10.1117/12.656224
Published in SPIE Proceedings Vol. 6154:
Optical Microlithography XIX
Donis G. Flagello, Editor(s)
PDF: 8 pages
Proc. SPIE 6154, Optical Microlithography XIX, 61543T (20 March 2006); doi: 10.1117/12.656224
Show Author Affiliations
Yuji Setta, Fujitsu Ltd. (Japan)
Hiroki Futatsuya, Fujitsu Ltd. (Japan)
Atsushi Sagisaka, Fujitsu Ltd. (Japan)
Tatsuo Chijimatsu, Fujitsu Ltd. (Japan)
Hiroki Futatsuya, Fujitsu Ltd. (Japan)
Atsushi Sagisaka, Fujitsu Ltd. (Japan)
Tatsuo Chijimatsu, Fujitsu Ltd. (Japan)
Takayoshi Minami, Fujitsu Ltd. (Japan)
Fumitoshi Sugimoto, Fujitsu Ltd. (Japan)
Seiichi Ishikawa, Fujitsu Ltd. (Japan)
Satoru Asai, Fujitsu Ltd. (Japan)
Fumitoshi Sugimoto, Fujitsu Ltd. (Japan)
Seiichi Ishikawa, Fujitsu Ltd. (Japan)
Satoru Asai, Fujitsu Ltd. (Japan)
Published in SPIE Proceedings Vol. 6154:
Optical Microlithography XIX
Donis G. Flagello, Editor(s)
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