
Proceedings Paper
Full-field exposure tools for ArF immersion lithographyFormat | Member Price | Non-Member Price |
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Paper Abstract
Immersion lithography has by far satisfied most expectations regarding its feasibility as the next lithographic
technique for the 65-nm node and below. To further advance 193-nm immersion lithography, a means of efficiently
controlling water as an immersion fluid and research and development concerning resist processes are necessary.
In 2004, Nikon Corporation introduced a 0.85 numerical aperture (NA) 193-nm immersion exposure tool that uses
water as the immersion liquid. This engineering evaluation tool (EET) is equipped with a highly efficient temperaturestabilized
water nozzle assembly. Selete Inc. in collaboration with Nikon Corporation has been evaluating the
performance and various characteristics of the EET while also investigating various photoresist and topcoat processes.
We selected three types of standard immersion processes that offered the best performance for our evaluation
purposes. A resolution limit of 70-nm half-pitch line-and-space (L/S) patterns has been confirmed. A 0.8-μm depth of
focus (DOF) was also verified for an 80-nm half-pitch L/S pattern. In addition, full wafer (WF) critical dimension (CD)
uniformity of less than 5 nm (3 sigma) has been demonstrated for a 90-nm half-pitch L/S pattern on a 300-mm wafer
(WF). After the implementation of various improvements to both the EET and the topcoat/resist processes, we have
achieved a total defect density of 0.23/cm2, and this defect level is low enough for pilot production.
Paper Details
Date Published: 21 March 2006
PDF: 7 pages
Proc. SPIE 6154, Optical Microlithography XIX, 61544I (21 March 2006); doi: 10.1117/12.656130
Published in SPIE Proceedings Vol. 6154:
Optical Microlithography XIX
Donis G. Flagello, Editor(s)
PDF: 7 pages
Proc. SPIE 6154, Optical Microlithography XIX, 61544I (21 March 2006); doi: 10.1117/12.656130
Show Author Affiliations
Jeung-woo Lee, Semiconductor Leading Edge Technologies, Inc. (Japan)
Akihiko Otoguro, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)
Kiyoshi Fujii, Semiconductor Leading Edge Technologies, Inc. (Japan)
Akihiko Otoguro, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)
Kiyoshi Fujii, Semiconductor Leading Edge Technologies, Inc. (Japan)
Ken-ichi Shiraishi, Nikon Corp. (Japan)
Tomoharu Fujiwara, Nikon Corp. (Japan)
Yuki Ishii, Nikon Corp. (Japan)
Tomoharu Fujiwara, Nikon Corp. (Japan)
Yuki Ishii, Nikon Corp. (Japan)
Published in SPIE Proceedings Vol. 6154:
Optical Microlithography XIX
Donis G. Flagello, Editor(s)
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