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Proceedings Paper

Contributions to innate material roughness in resist
Author(s): Jeanette M. Roberts; Robert Meagley; Theodore H. Fedynyshyn; Roger F. Sinta; David K. Astolfi; Russell B. Goodman; Alberto Cabral
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Paper Abstract

A method has been developed to probe the Innate Material Roughness (IMR) of resist materials. We have applied this to EUV and 248 nm resists to deconvolute the material contributions to roughness: 1) the polymer alone, 2) interaction between the polymer, photoacid generator (PAG), base quencher, and photolysis byproducts, 3) the effects of exposure, and 4) development. We studied ESCAP based resists (with more limited data on APEX polymers), an iodonium nonaflate PAG, a tetabutyl ammonium hydroxide (TBAH) base quencher, and standard tetramethylammonium hydroxide (TMAH) development.

Paper Details

Date Published: 29 March 2006
PDF: 11 pages
Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61533U (29 March 2006); doi: 10.1117/12.655740
Show Author Affiliations
Jeanette M. Roberts, Intel Corp. (United States)
Robert Meagley, Intel Corp. (United States)
Theodore H. Fedynyshyn, MIT Lincoln Lab. (United States)
Roger F. Sinta, MIT Lincoln Lab. (United States)
David K. Astolfi, MIT Lincoln Lab. (United States)
Russell B. Goodman, MIT Lincoln Lab. (United States)
Alberto Cabral, MIT Lincoln Lab. (United States)

Published in SPIE Proceedings Vol. 6153:
Advances in Resist Technology and Processing XXIII
Qinghuang Lin, Editor(s)

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