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Proceedings Paper

Wet-recess process optimization of a developer-soluble gap-fill material for planarization of trenches in trench-first dual damascene process
Author(s): Carlton Washburn; Nick Brakensiek; Alice Guerrero; Kevin Edwards; Charlyn Stroud; Nicki Chapman
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Paper Abstract

This paper describes a new approach to help overcome the challenges of fabricating leading-edge devices by using the trench first dual damascene process. Wet gap-fill materials are designed to reduce film thickness bias across a wafer while keeping wafers in the same track in which they were coated. As the first process step, the wafer is coated with a thick layer of wet gap-fill material to fill all trenches, thus guarding against resist pooling in the trenches. The substrate is then baked to partially cure the wet gap-fill material. Standard 0.26N tetramethylammonium hydroxide (TMAH) is then used to wet etch the wet gap-fill layer back to the substrate surface. For this study, substrates with different trench depths and widths were processed, cross-sectioned, and measured. The effect of trench dimensions and aspect ratio on the develop properties of WGF200-343 was investigated to see if it could be used as a wet trench-fill material. This work will help develop a process that will allow the use of trench-first DD processing in modern semiconductor manufacturing.

Paper Details

Date Published: 11 April 2006
PDF: 6 pages
Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61532K (11 April 2006); doi: 10.1117/12.655734
Show Author Affiliations
Carlton Washburn, Brewer Science, Inc. (United States)
Nick Brakensiek, Brewer Science, Inc. (United States)
Alice Guerrero, Brewer Science, Inc. (United States)
Kevin Edwards, Brewer Science, Inc. (United States)
Charlyn Stroud, Brewer Science, Inc. (United States)
Nicki Chapman, Brewer Science, Inc. (United States)

Published in SPIE Proceedings Vol. 6153:
Advances in Resist Technology and Processing XXIII
Qinghuang Lin, Editor(s)

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