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Proceedings Paper

The investigation of 193nm CPL 3D topology mask effect on wafer process performance
Author(s): Yung Feng Cheng; Yueh Lin Chou; Chuen Huei Yang
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Paper Abstract

As semiconductor process technology moves down below 90nm and 65nm, 193nm CPL (Chromeless Phase Lithography) technology becomes an important lithography strategy for process improvement on critical layers. In addition to the demand for very tight mask CD control, for a dry-etched process, there are two critical factors that can have significant impact on wafer CD control and window performance. They are etch-depth control (phase) through feature pitch and overall etching slope profile. Both affect image quality and the final overlapped process window. In this paper, we will study the effect of a 3D topology mask on the process window and wafer CD by making special 193nm CPL masks and printing them on 300mm wafers under a production-manufacturing environment. These masks had been specially designed with different sidewall angles and different etch depths (phase). There are 4 different quartz etch depths and 3 different sidewall angles for specially designed test patterns that are compatible with the 65nm technology node. They are printed on 300mm wafers by using a high NA ASML 193nm scanner and high contrast resist. In order to establish more effective specifications of phase and profile control on 193nm CPL between mask shops and wafer fabs, all AFM, wafer CD, and simulation results will be compared and correlated. By comparing the wafer CD and pattern profile on through focus conditions, we can understand the impact of phase and 3D mask profile on process performance.

Paper Details

Date Published: 15 March 2006
PDF: 12 pages
Proc. SPIE 6154, Optical Microlithography XIX, 61542D (15 March 2006); doi: 10.1117/12.655165
Show Author Affiliations
Yung Feng Cheng, United Microelectronics Corp. (Taiwan)
Yueh Lin Chou, United Microelectronics Corp. (Taiwan)
Chuen Huei Yang, United Microelectronics Corp. (Taiwan)

Published in SPIE Proceedings Vol. 6154:
Optical Microlithography XIX
Donis G. Flagello, Editor(s)

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