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Proceedings Paper

Deconstructing the resist to probe innate material roughness
Author(s): T. H. Fedynyshyn; R. F. Sinta; D. K. Astolfi; A. Cabral; J. Roberts; R. Meagley
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Paper Abstract

We have developed an AFM-based technique to measure intrinsic material roughness after base development. This method involves performing an interrupted development of the resist film and measuring the resulting film roughness after a certain fixed film loss. Employing this technique, we have deconstructed the resist into component materials and established that the PAG is a major material contributor of film roughness and that PAG segregation in the resist is likely responsible for nano-scale dissolution inhomogeneities. Small differences in PAG concentration as a result of standing waves in the resist can lead to large changes in surface roughness due to PAG or PAG-photoproduct segregation and the resultant non-linear change in nano-scale dissolution rates. The temperature dependence of the PAG segregation suggests that increased mobility of the PAG occurs due to a lowering of the film Tg during the deprotection process.

Paper Details

Date Published: 29 March 2006
PDF: 11 pages
Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 615315 (29 March 2006);
Show Author Affiliations
T. H. Fedynyshyn, MIT Lincoln Lab. (United States)
R. F. Sinta, MIT Lincoln Lab. (United States)
D. K. Astolfi, MIT Lincoln Lab. (United States)
A. Cabral, MIT Lincoln Lab. (United States)
J. Roberts, Intel Corp. (United States)
R. Meagley, Intel Corp. at LBNL (United States)


Published in SPIE Proceedings Vol. 6153:
Advances in Resist Technology and Processing XXIII
Qinghuang Lin, Editor(s)

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