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Proceedings Paper

Photonic integration for high-density and multifunctionality in the InP-material system
Author(s): F. Robin; D. Erni; S. Costea; P. Cristea; X. Cui; Y. Fedoryshyn; E. Gini; C. Hafner; R. Harbers; J. Holzman; H.-J. Lohe; P. Ma; K. Rauscher; R. Scollo; G. Stark; P. Strasser; W. Vogt; R. Wüest; H. Jäckel
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Paper Abstract

Monolithic photonic integration offers unsurpassed perspectives for higher functional density, new functions, high per-formance, and reduced cost for the telecommunication. Advanced local material growth techniques and the emerging photonic crystal (PhC) technology are enabling concepts towards high-density photonic integration, unprecedented per-formance, multi-functionality, and ultimately optical systems-on-a-chip. In this paper, we present our achievements in photonic integration applied to the fabrication of InP-based mode-locked laser diodes capable of generating optical pulses with sub-ps duration using the heterogeneous growth of a new uni-traveling carrier ultrafast absorber. The results are compared to simulations performed using a distributed model including intra-cavity reflections at the sections inter-faces and hybrid mode-locking. We also discuss our work on InP-based photonic crystals (PhCs) for dense photonic integration. A combination of two-dimensional modeling for functional optimization and three-dimensional simulation for real-world verification is used. The fabricated structures feature more than 3.5μm deep holes as well as excellent pattern-transfer accuracy using electron-beam lithography and advanced proximity-effects correction. Passive devices such as waveguides, 60° bends and power splitters are characterized by means of the end-fire technique. The devices are also investigated using scanning-near field optical microscopy. The PhC activity is extended to the investigation of TM bandgaps for all-optical switches relying on intersubband transitions at 1.55μm in AlAsSb/InGaAs quantum wells.

Paper Details

Date Published: 3 March 2006
PDF: 15 pages
Proc. SPIE 6124, Optoelectronic Integrated Circuits VIII, 612415 (3 March 2006); doi: 10.1117/12.652109
Show Author Affiliations
F. Robin, ETH Zurich (Switzerland)
D. Erni, ETH Zurich (Switzerland)
S. Costea, ETH Zurich (Switzerland)
P. Cristea, ETH Zurich (Switzerland)
X. Cui, ETH Zurich (Switzerland)
Y. Fedoryshyn, ETH Zurich (Switzerland)
E. Gini, ETH Zurich (Switzerland)
C. Hafner, ETH Zurich (Switzerland)
R. Harbers, ETH Zurich (Switzerland)
J. Holzman, ETH Zurich (Switzerland)
H.-J. Lohe, ETH Zurich (Switzerland)
P. Ma, ETH Zurich (Switzerland)
K. Rauscher, ETH Zurich (Switzerland)
R. Scollo, ETH Zurich (Switzerland)
G. Stark, ETH Zurich (Switzerland)
P. Strasser, ETH Zurich (Switzerland)
W. Vogt, ETH Zurich (Switzerland)
R. Wüest, ETH Zurich (Switzerland)
H. Jäckel, ETH Zurich (Switzerland)

Published in SPIE Proceedings Vol. 6124:
Optoelectronic Integrated Circuits VIII
Louay A. Eldada; El-Hang Lee, Editor(s)

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