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Proceedings Paper

31 Mp and 39 Mp full-frame CCD image sensors with improved charge capacity and angle response
Author(s): Eric J. Meisenzahl; Edmund K. Banghart; David N. Nichols; John P. Shepherd; Eric G. Stevens; Kwok Y. Wong
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Paper Abstract

This paper describes the design and performance of two new high-resolution full-frame architecture CCD imaging devices for use in professional color, digital still-imaging applications. These devices are made using 6.8 μm pixels and contain a dual-split HCCD register with two outputs to increase frame rate. The KODAK KAF-31600 Image Sensor (31 Mp) is designed with microlenses to maximize sensitivity, whereas the KODAK KAF-39000 Image Sensor (39 Mp) is designed without microlenses to maximize incident light-angle response. Of particular interest is the implementation of an under-the-field oxide (UFOX) lateral overflow drain (LOD) and thin light shield process technologies. The new UFOX LOD structure forms the LOD under the thick-field oxide that eliminates a breakdown condition, allowing much higher LOD doping levels to be used. The net result is that the LOD may be scaled to smaller dimensions, thereby enabling larger charge capacities without compromising blooming control. The thin light shield process utilizes only the TiW portion of the TiW/Al metal bilayer to form the pixel aperture. This reduces the overall stack height that helps improve angle response (for pixels using microlenses) or critical crosstalk angles (for pixels without microlenses).

Paper Details

Date Published: 10 February 2006
PDF: 9 pages
Proc. SPIE 6069, Digital Photography II, 606902 (10 February 2006);
Show Author Affiliations
Eric J. Meisenzahl, Eastman Kodak Co. (United States)
Edmund K. Banghart, Eastman Kodak Co. (United States)
David N. Nichols, Eastman Kodak Co. (United States)
John P. Shepherd, Eastman Kodak Co. (United States)
Eric G. Stevens, Eastman Kodak Co. (United States)
Kwok Y. Wong, Eastman Kodak Co. (United States)

Published in SPIE Proceedings Vol. 6069:
Digital Photography II
Nitin Sampat; Jeffrey M. DiCarlo; Russel A. Martin, Editor(s)

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