We have developed a new ArF-RELACS (Resolution Enhancement Lithography Assisted by Chemical Shrink) material called AZ-LExp.R720. The principle and process procedure of LExp.R720 are almost identical to those previously developed with KrF lithography. The extent of crosslinking reactions and the mobility balance of chemical components at the boundary between resist and the RELACS film is adjusted to ArF resist chemistry. LExp.R720 can vary shrinkage from 10 to 40nm by controlling the process conditions, mainly the mixing bake temperature. The amount of shrinkage is independent of pattern pitch and focus. We confirmed that pattern profile, lithography margin, CD uniformity, etching resistance, and pattern defects were not deteriorated by the RELACS process with deionized water development. L.ExpR720 was able to get an amount of shrinkage with several of ArF resists, which has commercial applications. In conclusion, we believe that LExp.R720 is extremely useful for 65 nm node and next generation devices.

Date Published: 29 March 2006
PDF: 8 pages
Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61532I (29 March 2006); doi: 10.1117/12.651242

Published in SPIE Proceedings Vol. 6153:
Advances in Resist Technology and Processing XXIII
Qinghuang Lin, Editor(s)