
Proceedings Paper
In-chip optical CD measurements for non-volatile memory devicesFormat | Member Price | Non-Member Price |
---|---|---|
$17.00 | $21.00 |
Paper Abstract
A potential limitation to a wider usage of the scatterometry technique for CD evaluation comes from its requirement of
dedicated regular measurement gratings, located in wafer scribe lanes. In fact, the simplification of the original chip
layout that is often requested to design these gratings may impact on their printed dimension and shape. Etched gratings
might also suffer from micro-loading effects other than in the circuit. For all these reasons, measurements collected
therein may not represent the real behavior of the device. On the other hand, memory devices come with large sectors
that usually possess the characteristics required for a proper scatterometry evaluation. In particular, for a leading edge
flash process this approach is in principle feasible for the most critical process steps. The impact of potential drawbacks,
mainly lack of pattern regularity within the tool probe area, is investigated. More, a very large sampling plan on features
with equal nominal CD and density spread over the same exposure shot becomes feasible, thus yielding a deeper insight
of the overall lithographic process window and a quantitative method to evaluate process equipment performance along
time by comparison to acceptance data and/or last preventive maintenance. All the results gathered in the device main
array are compared to those collected in standard scatterometry targets, tailored to the characteristics of the considered
layers in terms of designed CD, pitch, stack and orientation.
Paper Details
Date Published: 24 March 2006
PDF: 12 pages
Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 61520D (24 March 2006); doi: 10.1117/12.650997
Published in SPIE Proceedings Vol. 6152:
Metrology, Inspection, and Process Control for Microlithography XX
Chas N. Archie, Editor(s)
PDF: 12 pages
Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 61520D (24 March 2006); doi: 10.1117/12.650997
Show Author Affiliations
Mauro Vasconi, STMicroelectronics Srl (Italy)
Stephanie Kremer, KLA-Tencor France S.A.RL. (France)
M. Polli, KLA-Tencor Italy Srl (Italy)
Stephanie Kremer, KLA-Tencor France S.A.RL. (France)
M. Polli, KLA-Tencor Italy Srl (Italy)
Ermes Severgnini, STMicroelectronics Srl (Italy)
Silvia S. Trovati, STMicroelectronics Srl (Italy)
Silvia S. Trovati, STMicroelectronics Srl (Italy)
Published in SPIE Proceedings Vol. 6152:
Metrology, Inspection, and Process Control for Microlithography XX
Chas N. Archie, Editor(s)
© SPIE. Terms of Use
