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Proceedings Paper

Investigation of the III-V oxidation process for the fabrication of sub-micron three dimensional photonic devices
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Paper Abstract

The lateral oxidation of epitaxially grown AlxGa1-xAs layers is investigated in an open-chamber system based on a conventional horizontal tube furnace, and in a closed-chamber system. The oxidation is selective and depends on the Al content, process temperature, and process time. The process is characterized as a function of these parameters. The closed chamber system provides faster oxidation with superior control, repeatability and uniformity of the oxidation extent as compared to the open-chamber system. Based on these investigations of the oxidation reaction, we propose a unique method for realizing 3D photonic crystals in GaAs/AlGaAs-based material.

Paper Details

Date Published: 23 January 2006
PDF: 8 pages
Proc. SPIE 6110, Micromachining Technology for Micro-Optics and Nano-Optics IV, 61100P (23 January 2006); doi: 10.1117/12.647157
Show Author Affiliations
Kierthi Swaminathan, Univ. of Delaware (United States)
Janusz Murakowski, Univ. of Delaware (United States)
Chris Schuetz, Univ. of Delaware (United States)
Garrett J. Schneider, Univ. of Delaware (United States)
Bhargav S. Citla, Univ. of Delaware (United States)
Dennis W. Prather, Univ. of Delaware (United States)

Published in SPIE Proceedings Vol. 6110:
Micromachining Technology for Micro-Optics and Nano-Optics IV
Eric G. Johnson; Gregory P. Nordin; Thomas J. Suleski, Editor(s)

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