Share Email Print

Proceedings Paper

Properties of a High T0 1.3µm GaInNAs/GaAs Quantum Well Laser Diode
Author(s): X. Zhang; J. A. Gupta; P. J. Barrios; G. Pakulski; X. Wu; A. Delage; T. J. Hall
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

The properties of a 1.3μm GaInNAs Double Quantum Well (QW) ridge waveguide (RWG) laser have been systematically studied for GaAs based uncooled long wavelength lasers. The threshold current, transparency current, optical gain, internal loss and quantum efficiency characteristics were assessed by light-current (L-I) measurement using devices with different geometries. Measurements of gain spectra versus injection current and temperature were taken and used to analyze GaInNAs as an active material in terms of gain, loss and transparency. The experimental observations are discussed. The results are compared with those obtained from lasers made by other conventional materials. The high characteristic temperature (T0=155K from 20°C to 75°C) and comparable stimulated emission to InP based lasers offer the promise of application as a light source for low cost data communication systems.

Paper Details

Date Published: 22 February 2006
PDF: 10 pages
Proc. SPIE 6133, Novel In-Plane Semiconductor Lasers V, 613313 (22 February 2006); doi: 10.1117/12.646541
Show Author Affiliations
X. Zhang, National Research Council Canada (Canada)
Univ. of Ottawa (Canada)
J. A. Gupta, National Research Council Canada (Canada)
P. J. Barrios, National Research Council Canada (Canada)
G. Pakulski, National Research Council Canada (Canada)
X. Wu, National Research Council Canada (Canada)
A. Delage, National Research Council Canada (Canada)
T. J. Hall, Univ. of Ottawa (Canada)

Published in SPIE Proceedings Vol. 6133:
Novel In-Plane Semiconductor Lasers V
Carmen Mermelstein; David P. Bour, Editor(s)

© SPIE. Terms of Use
Back to Top