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Proceedings Paper

Microscopic emission properties of nonpolar α-plane GaN grown by HVPE
Author(s): T. Paskova; R. Kroeger; P. P. Paskov; S. Figge; D. Hommel; B. Monemar; B. Haskell; P. Fini; J. S. Speck; S. Nakamura
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Paper Abstract

We have studied the emission distributions in nonpolar α-plane GaN thick films grown by HVPE using different nucleation schemes. The emission spectra show in addition to the near band edge emission band, also defect related bands due to different structural defects being enhanced/reduced to different extent in samples grown on different templates. Spatially resolved cathodoluminescence imaging reveals the in-plane distributions of the respective emission bands, which allows us to correlate the emissions with particular stacking fault structural defects independently revealed by plan-view transmission electron microscopy. In addition, emission distributions were visualized in vicinity of largescale defects like surface triangle pits, depressions and cracks attributed to prevailing defect formation and/or impurity incorporation.

Paper Details

Date Published: 3 March 2006
PDF: 7 pages
Proc. SPIE 6121, Gallium Nitride Materials and Devices, 612106 (3 March 2006); doi: 10.1117/12.645672
Show Author Affiliations
T. Paskova, Univ. of Bremen (Germany)
R. Kroeger, Univ. of Bremen (Germany)
P. P. Paskov, Univ. of Linköping (Sweden)
S. Figge, Univ. of Bremen (Germany)
D. Hommel, Univ. of Bremen (Germany)
B. Monemar, Univ. of Linköping (Sweden)
B. Haskell, Univ. of California, Santa Barbara (United States)
P. Fini, Univ. of California, Santa Barbara (United States)
J. S. Speck, Univ. of California, Santa Barbara (United States)
S. Nakamura, Univ. of California, Santa Barbara (United States)

Published in SPIE Proceedings Vol. 6121:
Gallium Nitride Materials and Devices
Cole W. Litton; James G. Grote; Hadis Morkoc; Anupam Madhukar, Editor(s)

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