Share Email Print
cover

Proceedings Paper

Diode-end-pumped actively and passively Q-switched Nd:GdVO4 lasers at 1.34 μm
Author(s): Chenlin Du; Shuangchen Ruan; Huaijin Zhang; Yongqin Yu
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

With an acousto-optical Q-switch and Co:LaMgAl11O19(Co:LMA) crystal as the saturable absorber, diode-end-pumped actively and passively Q-switched Nd:GdVO4 lasers at 1.34 μm were demonstrated, respectively. For acousto-optical Q-switched operation, the maximum average output power, the highest pulse energy, the shortest pulse width and the highest peak power were obtained to be 4.54 W, 223 μJ, 19 ns and 11.75 kW, respectively. For passively Q-switched operation with a 0.3-mm-long Co:LMA crystal as the saturable absorber, the maximum average output power, the highest pulse energy, the shortest pulse width and the highest peak power were obtained to be 1.43 W, 112 μJ, 55 ns and 1.95 kW, respectively.

Paper Details

Date Published: 28 February 2006
PDF: 6 pages
Proc. SPIE 6100, Solid State Lasers XV: Technology and Devices, 61001P (28 February 2006); doi: 10.1117/12.645028
Show Author Affiliations
Chenlin Du, Shenzhen Univ. (China)
Shuangchen Ruan, Shenzhen Univ. (China)
Huaijin Zhang, Shandong Univ. (China)
Yongqin Yu, Shenzhen Univ. (China)


Published in SPIE Proceedings Vol. 6100:
Solid State Lasers XV: Technology and Devices
Hanna J. Hoffman; Ramesh K. Shori, Editor(s)

© SPIE. Terms of Use
Back to Top