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Proceedings Paper

High-efficiency and high-reliability 9xx-nm bars and fiber-coupled devices at Coherent
Author(s): Hailong Zhou; Keith Kennedy; Eli Weiss; Jun Li; Serguei Anikitchev; Patrick Reichert; Jihua Du; David Schleuning; David Nabors; Murray Reed; Mika Toivonen; Sami Lehkonen; Jouko Haapamaa
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Paper Abstract

Ongoing optimization of epitaxial design within Coherent device engineering has led to a family of high power-conversion-efficiency (PCE) products on conductively cooled packages (CCP) and fiber array packages (FAP). At a 25°C heat sink temperature, the PCE was measured at 71.5% with 75W CW output power on 30% fill-factor (FF) bars with passive cooling. At heat sink temperatures as high as 60°C the PCE of these bars is still maintained above 60%. Powered by such high efficiency 9xx nm diodes, Coherent FAP products have consistently exceeded 55% PCE up to 50W power levels, with 62% PCE demonstrated out of the fiber. High linear-power-density (LPD) operation of 100μm x 7-emitter bars at LPD = 80 mW/μm was also demonstrated. Bars with 7-emitter were measured up to 140W QCW power before catastrophic optical mirror damage (COMD) occurred, which corresponds to a COMD value of 200mW/μm or 2D facet power density of 29.4 MW/cm2. Leveraging these improvements has enabled high power FAPs with >90W CW from an 800μm-diameter fiber bundle. Extensive reliability testing has already accumulated 400,000 total real-time device hours at a variety of accelerated and non-accelerated operating conditions. A random failure rate <0.5% per kilo-hours and gradual degradation rate <0.4% per kilo-hours have been observed. For a 30% FF 50W CW 9xx nm bar, this equates to >30,000 hours of median lifetime at a 90% confidence level. More optimized 30% FF 9xx nm bars are under development for power outputs up to 80W CW with extrapolated median lifetimes greater than 20,000 hours.

Paper Details

Date Published: 15 February 2006
PDF: 9 pages
Proc. SPIE 6104, High-Power Diode Laser Technology and Applications IV, 610406 (15 February 2006); doi: 10.1117/12.644983
Show Author Affiliations
Hailong Zhou, Coherent Inc. (United States)
Keith Kennedy, Coherent Inc. (United States)
Eli Weiss, Coherent Inc. (United States)
Jun Li, Coherent Inc. (United States)
Serguei Anikitchev, Coherent Inc. (United States)
Patrick Reichert, Coherent Inc. (United States)
Jihua Du, Coherent Inc. (United States)
David Schleuning, Coherent Inc. (United States)
David Nabors, Coherent Inc. (United States)
Murray Reed, Coherent Inc. (United States)
Mika Toivonen, Coherent Finland (Finland)
Sami Lehkonen, Coherent Finland (Finland)
Jouko Haapamaa, Coherent Finland (Finland)

Published in SPIE Proceedings Vol. 6104:
High-Power Diode Laser Technology and Applications IV
Mark S. Zediker, Editor(s)

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