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Proceedings Paper

Noise performance and temperature coefficients studies for the back-illuminated, thin silicon pin photodiode arrays
Author(s): Ilja Goushcha; Bernd Tabbert; Alexander O. Goushcha
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Paper Abstract

Noise characteristics of the backlit, pin photodiode arrays having different vertical structures were studied. We showed that in many cases, the non-optical crosstalk between adjacent elements determines the noise performance and detectivity of the array pixels. For the arrays with the structure described in our recent works, the crosstalk always remained well below 0.01%, which allowed reaching the minimum noise level of ~ 10-15 A/&sqrt;Hz determined by the thermal noise. In contrast, for the arrays built applying conventional structures the crosstalk was two orders of magnitude higher, which noticeably decreased the sensitivity of the pixels increasing their noise and switching their operation towards background-limited performance. The background signal originated from the non-optical crosstalk and produced a noise level significantly higher that the thermal noise. We also compared the temperature coefficients for different arrays. For the structures with improved electrical crosstalk, the measured value of the shunt resistance temperature coefficient was typically below 8 %/C and the responsivity temperature coefficient value did not exceed +0.02 %/C within the spectral range from 450 through 800 nm. The advantages and drawbacks of application of the reported in this work photodiode arrays in high quality imaging systems are discussed.

Paper Details

Date Published: 23 February 2006
PDF: 9 pages
Proc. SPIE 6119, Semiconductor Photodetectors III, 61190C (23 February 2006); doi: 10.1117/12.644958
Show Author Affiliations
Ilja Goushcha, Semicoa (United States)
Bernd Tabbert, Semicoa (United States)
Alexander O. Goushcha, Semicoa (United States)

Published in SPIE Proceedings Vol. 6119:
Semiconductor Photodetectors III
Marshall J. Cohen; Eustace L. Dereniak, Editor(s)

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