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Proceedings Paper

Design of a 10 GHz silicon modulator based on a 0.25 μm CMOS process: a silicon photonic approach
Author(s): D. W. Zheng; D. Z. Feng; G. Gutierrez; T. Smith
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Paper Abstract

We report the design of a 10 GHz non-return-to-zero (NRZ) silicon modulator based upon 0.25-μm CMOS/BiCMOS processes. The basic optical component is a ridge waveguide slightly-doped with P and N impurities, which forms a reverse-biased P/N junction. The diode typically operates between reverse and zero biases, so as to change the number of free carriers overlapping with the optical mode and consequently modulate the phase of the light. This type of phase shifters form the arms of a push-pull Mach-Zehnder interferometer to realize amplitude modulation.

Paper Details

Date Published: 1 March 2006
PDF: 10 pages
Proc. SPIE 6125, Silicon Photonics, 61250E (1 March 2006); doi: 10.1117/12.644942
Show Author Affiliations
D. W. Zheng, Kotura, Inc. (United States)
D. Z. Feng, Kotura, Inc. (United States)
G. Gutierrez, Kotura, Inc. (United States)
T. Smith, Kotura, Inc. (United States)

Published in SPIE Proceedings Vol. 6125:
Silicon Photonics
Joel A. Kubby; Graham T. Reed, Editor(s)

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