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Proceedings Paper

Spin depolarization in semiconductor spin detectors
Author(s): W. M. Chen; I. A. Buyanova; Y. Oka; C. R. Abernathy; S. J. Pearton
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Paper Abstract

A brief review is given of our recent experimental results from in-depth investigations of spin depolarization and underlying physical mechanisms within semiconductor spin detectors based on II-VIs (e.g. Zn(Cd)Se quantum wells) and III-Vs (e.g. InGaN quantum wells), which are relevant to applications for spin-LEDs based on ZnMnSe/Zn(Cd)Se and GaMnN/InGaN structures. By employing cw and time-resolved magneto-optical and optical spin orientation spectroscopy in combination with tunable laser excitation, we show that spin depolarization within these spin detectors is very efficient and is an important factor limiting efficiency of spin detection. Detailed physical mechanisms leading to efficient spin depolarization will be discussed.

Paper Details

Date Published: 15 February 2006
PDF: 12 pages
Proc. SPIE 6118, Ultrafast Phenomena in Semiconductors and Nanostructure Materials X, 611804 (15 February 2006); doi: 10.1117/12.644601
Show Author Affiliations
W. M. Chen, Linköping Univ. (Sweden)
I. A. Buyanova, Linköping Univ. (Sweden)
Y. Oka, Tohoku Univ. (Japan)
C. R. Abernathy, Univ. of Florida (United States)
S. J. Pearton, Univ. of Florida (United States)

Published in SPIE Proceedings Vol. 6118:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials X
Kong-Thon Tsen; Jin-Joo Song; Hongxing Jiang, Editor(s)

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