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Proceedings Paper

Successive phase change and stability of near-field patterns for broad-area laser diodes
Author(s): Tsunenori Asatsuma; Yoshiro Takiguchi; Sebastien Frederico; Akio Furukawa; Shoji Hirata
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Paper Abstract

For the application of broad-area laser diodes (BA-LDs) to display or printing, uniform distribution and stability of their near-field pattern (NFP) are the most important demand. In order to control the NFP, we have fabricated BA-LDs with index-guided structure and got better top-hat and stabler NFP than that for gain-guided BA-LDs. However, this mechanism is not understood yet. Therefore, we study the features of BA-LDs' NFP systematically, and set up a new model to understand their behaviors. The NFPs of BA-LDs evolve via three phases with increasing operation current: the first phase is "mode-progressing phase" in which the number of the spatial modes increases orderly, and the second phase is "transition phase" in which the spatial modes become unstable and fluctuate. The third phase has different properties according to the waveguiding structure of BA-LDs: "disordered phase" appears for gain-guided structure in which several specific modes dominate in the whole distribution (filamentation behavior), on the other hand "ordered phase" appears in the case of index-guided structure in which a top-hat distribution is obtained. This top-hat NFP is almost unchanged with increasing output power. With these experimental results, we propose the new model, in which the emitting area of a BA-LD is divided into several parts and they are discussed separately.

Paper Details

Date Published: 15 February 2006
PDF: 7 pages
Proc. SPIE 6104, High-Power Diode Laser Technology and Applications IV, 61040C (15 February 2006); doi: 10.1117/12.644470
Show Author Affiliations
Tsunenori Asatsuma, Sony Corp. (Japan)
Yoshiro Takiguchi, Sony Corp. (Japan)
Sebastien Frederico, Sony Corp. (Japan)
Akio Furukawa, Sony Corp. (Japan)
Shoji Hirata, Sony Corp. (Japan)

Published in SPIE Proceedings Vol. 6104:
High-Power Diode Laser Technology and Applications IV
Mark S. Zediker, Editor(s)

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