Monolithically-integrated optical gain-competition inverters are demonstrated at 1.55 μm in the InGaAsP/InP material system. The optical inverters consist of etched-facet slave lasers that are side-injected with tapered etchedfacet master lasers. Single-input optical inverters show improved quenching contrast for devices with larger taper width with respect to the slave laser length. Inverter performance also shows a dependence on the ridge width and lasing modes of the slave laser. Two-input optical inverters are characterized which demonstrate NAND and NOR logic operation at different slave laser currents.

Date Published: 3 March 2006
PDF: 7 pages
Proc. SPIE 6124, Optoelectronic Integrated Circuits VIII, 612418 (3 March 2006); doi: 10.1117/12.643995

Published in SPIE Proceedings Vol. 6124:
Optoelectronic Integrated Circuits VIII
Louay A. Eldada; El-Hang Lee, Editor(s)