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Proceedings Paper

Transient photocurrent in alpha-As2Se3 thin films with optical bias
Author(s): M. A. Iovu; D. V. Harea; I. A. Vasiliev; E. P. Colomeico; M. S. Iovu
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Paper Abstract

Relaxation of pulsed photocurrents under optical bias is studied in amorphous films of glassy alloys As2Se3:Snx (x=0 to 3.5 at. %) by the time-of-flight technique and steepness band-to-band light illumination. In frame of multiple-trapping model it is shown that by adding tin to the glass former As2Se3, the hole drift mobility is strongly increased and hamper the recombination. The kinetics of the long-term photocurrent decay can be described by stretched exponential hction. The dispersion parameter a, which can be deduced from the time dependence of the photocurrent Iph(t) -infinity- exp[-(τ/τ)α] and, is about 0.47 for undoped samples, and 0.35 for tin-containing samples. The obtained results indicate the variation in occupation of deep localized centers. For the investigated samples, the width of distribution of the deep traps is approximately kT/α~50-70 meV.

Paper Details

Date Published: 14 December 2005
PDF: 7 pages
Proc. SPIE 5972, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies II, 59720A (14 December 2005); doi: 10.1117/12.639445
Show Author Affiliations
M. A. Iovu, Ctr. of Optoelectronics, IAP (Moldova)
D. V. Harea, Ctr. of Optoelectronics, IAP (Moldova)
I. A. Vasiliev, Ctr. of Optoelectronics, IAP (Moldova)
E. P. Colomeico, Ctr. of Optoelectronics, IAP (Moldova)
M. S. Iovu, Ctr. of Optoelectronics, IAP (Moldova)

Published in SPIE Proceedings Vol. 5972:
Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies II
Ovidiu Iancu; Adrian Manea; Paul Schiopu; Dan Cojoc, Editor(s)

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