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Proceedings Paper

GaAs nanowhiskers grown by molecular beam epitaxy on GaAs(111)B surface activated by Au: theory and experiment
Author(s): Vladimir Dubrovskii; Nikolai Sibirev; George Cirlin; Yuri Musikhin; Ilya Soshnikov; Yuri Samsonenko; Alexander Tonkikh; Victor Ustinov
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Paper Abstract

GaAs nanowhiskers are grown by molecular beam epitaxy (MBE) on the GaAs(111)B surface activated by Au at different conditions (Au layer thickness, GaAs flux, substrate temperature, effective thickness of deposited GaAs) and characterized by scanning electron microscopy technique. The dependence of the nanowhisker height on the size of Au- GaAs alloy drops is investigated. A kinetic model of nanowhiskers formation in the vapor-liquid-solid growth mechanism is proposed. In particular, the nanowhiskers growth rate is found as a function of the drop size, system energetics, and MBE growth conditions. The predictions of a theoretical model are compared to the results of experimental observations. It is demonstrated that the MBE method enables one to fabricate nanowhiskers ensembles with tunable structural properties (height, lateral size distribution, surface density) by changing the Au layer thickness, the amount of deposited GaAs, and MBE growth conditions.

Paper Details

Date Published: 13 June 2006
PDF: 9 pages
Proc. SPIE 5946, Optical Materials and Applications, 594611 (13 June 2006); doi: 10.1117/12.639405
Show Author Affiliations
Vladimir Dubrovskii, A.F. Ioffe Physico-Technical Institute (Russia)
Nikolai Sibirev, Institute for Analytical Instrumentation (Russia)
George Cirlin, Institute for Analytical Instrumentation (Russia)
Yuri Musikhin, A.F. Ioffe Physico-Technical Institute (Russia)
Ilya Soshnikov, A.F. Ioffe Physico-Technical Institute (Russia)
Yuri Samsonenko, Institute for Analytical Instrumentation (Russia)
Alexander Tonkikh, A.F. Ioffe Physico-Technical Institute (Russia)
Victor Ustinov, A.F. Ioffe Physico-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 5946:
Optical Materials and Applications
Arnold Rosental, Editor(s)

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