Proceedings Paper
The potential of silicon carbide for memory applications: bridging the technological gap between data storage and data processing| Format | Member Price | Non-Member Price |
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Paper Abstract
This paper demonstrates that electronically passivated Si-SiO2 interface enables the development of memories for both data storage and data processing. Experimental results on charge-retention times are presented to illustrate that the Si DRAMs would become nonvolatile memories if implemented into SiC. The disadvantages of the DRAM cell (1C1T), in terms of limited memory-capacity increase, are discussed to highlight the need for development of superior memory cells.
Paper Details
Date Published: 5 January 2006
PDF: 7 pages
Proc. SPIE 6035, Microelectronics: Design, Technology, and Packaging II, 603507 (5 January 2006); doi: 10.1117/12.639390
Published in SPIE Proceedings Vol. 6035:
Microelectronics: Design, Technology, and Packaging II
Alex J. Hariz, Editor(s)
PDF: 7 pages
Proc. SPIE 6035, Microelectronics: Design, Technology, and Packaging II, 603507 (5 January 2006); doi: 10.1117/12.639390
Show Author Affiliations
Sima Dimitrijev, Griffith Univ. (Australia)
Published in SPIE Proceedings Vol. 6035:
Microelectronics: Design, Technology, and Packaging II
Alex J. Hariz, Editor(s)
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