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Proceedings Paper

Si/Ge multilayer structures for optoelectronic applications
Author(s): George Cirlin; Alexander Tonkikh; Vadim Talalaev; Nikolai Zakharov; Peter Werner
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Paper Abstract

Quantum-dot Si/Ge superlattice structures with the Ge amount slightly above the critical for island formation are prepared by molecular beam epitaxy. The structures grown under optimized conditions are defect-free. Their structural and optical properties are described. A significant increase in the RT luminescence efficiency is obtained by adjusting such parameters as the growth temperature, growth rate of Ge, the number of the Ge quantum-dot sheets, their thickness, the level of Sb doping at specific planes, and the thickness of Si spacers. An intensive RT electroluminescence from the structures in the fiber optic communications 1.6-μm range is demonstrated. The approach opens new routes to the fabrication of Si-based RT light emitters.

Paper Details

Date Published: 13 June 2006
PDF: 9 pages
Proc. SPIE 5946, Optical Materials and Applications, 594610 (13 June 2006); doi: 10.1117/12.639339
Show Author Affiliations
George Cirlin, Institute for Analytical Instrumentation (Russia)
A.F. Ioffe Physico-Technical Institute (Russia)
Max-Planck-Institut für Mikrostrukturphysik (Germany)
Alexander Tonkikh, Institute for Analytical Instrumentation (Russia)
A.F. Ioffe Physico-Technical Institute (Russia)
Max-Planck-Institut für Mikrostrukturphysik (Germany)
Vadim Talalaev, Max-Planck-Institut für Mikrostrukturphysik (Germany)
St. Petersburg State Univ. (Russia)
Nikolai Zakharov, Max-Planck-Institut für Mikrostrukturphysik (Germany)
Peter Werner, Max-Planck-Institut für Mikrostrukturphysik (Germany)


Published in SPIE Proceedings Vol. 5946:
Optical Materials and Applications
Arnold Rosental, Editor(s)

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