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Proceedings Paper

Development of thermal sensor based on PbTe thin films in MEMS design
Author(s): Zinovi Dashevsky; Eli Rabih; Moshe Dariel
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Paper Abstract

The work of a MEMS-technology compatible thin-film thermoelectric IR radiation sensor with multiple PbTe thermocouples is simulated. The sensitivity up to 350 V/W is predicted. PbTe thin films are grown on the BaF2(111) buffered Si(111) substrates, using the hot-wall-beam epitaxy technique. Indium and zinc ion implantation is applied to transform the as-grown p-PbTe films into the n-type thermocouple counterpart films. With a dose of 10l6 cm-2 and exposition time of 3-4 h, a 4-μm-thick film is homogeneously reversed, retaining the high epitaxial quality.

Paper Details

Date Published: 13 June 2006
PDF: 7 pages
Proc. SPIE 5946, Optical Materials and Applications, 59461B (13 June 2006); doi: 10.1117/12.639180
Show Author Affiliations
Zinovi Dashevsky, Ben-Gurion Univ. of the Negev (Israel)
Eli Rabih, Ben-Gurion Univ. of the Negev (Israel)
Moshe Dariel, Ben-Gurion Univ. of the Negev (Israel)

Published in SPIE Proceedings Vol. 5946:
Optical Materials and Applications
Arnold Rosental, Editor(s)

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