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Proceedings Paper

Modeling and characterization of a smart two-direction MOSFET magnetic sensor
Author(s): Ali Abou-Elnour
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Paper Abstract

D.C. and A. C. characteristics of a magnetic sensor, based on Metal Oxide Semiconductor Field Effect Transistor (MOSFET) structure, have been investigated using an efficient two-dimensional physical simulator. With the coupling scheme between the magnetic field equation and the carrier transport equations in the present simulator, the effects of the device geometric parameters, the bias conditions, and the magnetic field on the current deflection due to magnetic field and on the magnetic sensor relative sensitivity are accurately determined. The MOSFET magnetic sensor capability is further enhanced by using an integrated smart structure which is able to fully detect the magnetic field variations in two directions. The current deflection and relative sensitivity for the smart two-directions magnetic sensor under different operating conditions are finally investigated with the present efficient physical simulator.

Paper Details

Date Published: 27 March 2006
PDF: 10 pages
Proc. SPIE 6166, Smart Structures and Materials 2006: Modeling, Signal Processing, and Control, 61660I (27 March 2006); doi: 10.1117/12.639154
Show Author Affiliations
Ali Abou-Elnour, Ajman Univ. of Science and Technology (United Arab Emirates)

Published in SPIE Proceedings Vol. 6166:
Smart Structures and Materials 2006: Modeling, Signal Processing, and Control
Douglas K. Lindner, Editor(s)

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