For this study, Ti/Si and Ta/Si structures were implanted with two doses of nitrogen 10¹⁵ ions/cm² (low dose) and 10¹⁷ ions/cm² (high dose) at 10KeV and 20KeV energy. Characterization was performed by Sheet resistance measurement and X-Ray diffraction (XRD) techniques. Results shows that implantation of 10¹⁵ ions/cm² dose of nitrogen does not cause any nitridation, while in case of high dose implanted samples formation of tantalum nitride phase was observed. Nitride layers formed this way was used as diffusion barrier layers for copper metallization in Silicon based integrated circuits.

Date Published: 3 January 2006
PDF: 6 pages
Proc. SPIE 6037, Device and Process Technologies for Microelectronics, MEMS, and Photonics IV, 60371E (3 January 2006); doi: 10.1117/12.638332

Published in SPIE Proceedings Vol. 6037:
Device and Process Technologies for Microelectronics, MEMS, and Photonics IV
Jung-Chih Chiao; Andrew S. Dzurak; Chennupati Jagadish; David V. Thiel, Editor(s)