We study theoretically a heterostructure device with the structure akin to a high-electron mobility transistor which can be used to generate electro-magnetic radiation in the terahertz range of frequencies. The gated electron channel is supplied with a lateral Schottky contact serving as the source. The operation of the device is associated with photomixing of optical signals in high-electric-field depletion region of the Schottky junction. The electrons and holes photogenerated in the Schottky junction depletion region and propagating across it induce the ac current in the quasi-neutral electron channel which, in turn, excites the plasma oscillations in this channel. Fast electron transport in the Schottky junction depletion region and resonant properties of the electron channel provide an enhanced response of the photomixer to optical signals at the plasma frequencies.

Date Published: 13 January 2006
PDF: 8 pages
Proc. SPIE 6039, Complex Systems, 60390K (13 January 2006); doi: 10.1117/12.638239

Published in SPIE Proceedings Vol. 6039:
Complex Systems
Axel Bender, Editor(s)