
Proceedings Paper
Modeling of plasma oscillations and terahertz photomixing in HEMT-like heterostructure with lateral Schottky junctionFormat | Member Price | Non-Member Price |
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Paper Abstract
We study theoretically a heterostructure device with the structure akin to a high-electron mobility transistor which can be
used to generate electro-magnetic radiation in the terahertz range of frequencies. The gated electron channel is supplied
with a lateral Schottky contact serving as the source. The operation of the device is associated with photomixing of
optical signals in high-electric-field depletion region of the Schottky junction. The electrons and holes photogenerated in
the Schottky junction depletion region and propagating across it induce the ac current in the quasi-neutral electron channel
which, in turn, excites the plasma oscillations in this channel. Fast electron transport in the Schottky junction depletion
region and resonant properties of the electron channel provide an enhanced response of the photomixer to optical signals
at the plasma frequencies.
Paper Details
Date Published: 13 January 2006
PDF: 8 pages
Proc. SPIE 6039, Complex Systems, 60390K (13 January 2006); doi: 10.1117/12.638239
Published in SPIE Proceedings Vol. 6039:
Complex Systems
Axel Bender, Editor(s)
PDF: 8 pages
Proc. SPIE 6039, Complex Systems, 60390K (13 January 2006); doi: 10.1117/12.638239
Show Author Affiliations
Maxim Ryzhii, Univ. of Aizu (Japan)
Irina Khmyrova, Univ. of Aizu (Japan)
Victor Ryzhii, Univ. of Aizu (Japan)
Irina Khmyrova, Univ. of Aizu (Japan)
Victor Ryzhii, Univ. of Aizu (Japan)
Taiichi Otsuji, Tohoku Univ. (Japan)
Michael S. Shur, Rensselaer Polytechnic Institute (United States)
Michael S. Shur, Rensselaer Polytechnic Institute (United States)
Published in SPIE Proceedings Vol. 6039:
Complex Systems
Axel Bender, Editor(s)
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