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Proceedings Paper

Evaluation of alternative capping layers for EUVL mask ML blank
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Paper Abstract

The standard silicon (Si) capping layer used for extreme ultra-violet lithography (EUVL) multilayer (ML) mask blanks has some shortcomings, such as low oxidation resistance, low chemical resistance, low etch selectivity in either the SiO2 buffer layer etch to the capping layer or the absorber etch (e.g., TaN) to the capping layer. These performance and process issues with Si capped ML mask blank will reduce the mask lifetime and require tighter process control during EUVL mask fabrication. Alternative capping materials have been investigated for both EUVL optics and for mask applications.1-5 It has been initially demonstrated that Ru capping layers have high oxidation resistance and high mask process margin as compared to Si ML cap. In this paper, we will present a detailed evaluation of Ru and ion beam deposited (IBD) diamond-like-carbon (DLC) for EUVL mask application. Performance evaluations of the DLC mask blank capping layer and Ru capping layer were made in the area of reflectivity performance, shelf-life, and EUV exposure stability. It has been shown that EUV exposure induced capping layer change depends upon the exposure conditions. However, we found that as long as the induced relative change in the ML cap material are the same (e.g., the same amount of oxidation), regardless of exposure time and exposure conditions, the resulting reflectivity change is about the same. In the case of the two capping layer materials we evaluated, the capping surface reaction with active oxygen is the primary cause for the reflectivity degradation.

Paper Details

Date Published: 8 November 2005
PDF: 10 pages
Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59923Z (8 November 2005); doi: 10.1117/12.637599
Show Author Affiliations
Pei-yang Yan, Intel Corp. (United States)
Eberhard Spiller, Spiller X-ray Optics (United States)
Eric Gullikson, Lawrence Berkeley National Lab. (United States)
Shannon Hill, National Institute of Standards and Technology (United States)

Published in SPIE Proceedings Vol. 5992:
25th Annual BACUS Symposium on Photomask Technology
J. Tracy Weed; Patrick M. Martin, Editor(s)

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