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Proceedings Paper

Organic semiconductor distributed feedback lasers
Author(s): W. Kowalsky; T. Rabe; D. Schneider; H.-H. Johannes; C. Karnutsch; M. Gerken; U. Lemmer; J. Wang; T. Weimann; P. Hinze; T. Riedl
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Paper Abstract

Compared to well established liquid based dye lasers, amplifying media based on amorphous organic thin films allow the realisation of versatile, cost effective and compact lasers. Aside from that, the materials involved are organic semiconductors, which in principle allow the fabrication of future electrically driven organic laser diodes. A highly promising, low-loss resonator geometry for these lasers is the distributed feedback (DFB) structure, which is based on a periodic modulation of the refractive index in the waveguide on the nanometer scale. By variation of the grating period Λ one may tune the laser emission within the gain spectrum of the amplifying medium. We will demonstrate organic lasers spanning the entire spectral region from 360-715 nm. Tuning ranges as large as 115 nm (λ = 598-713 nm) in the red spectral region and more than 30 nm (λ = 362-394 nm) in the UV render these novel lasers highly attractive for various spectroscopic applications. As the grating period Λ is typically between 100 nm and 400 nm the DFB resonators are fabricated by e-beam lithography. These gratings may, however, be used as masters to obtain an arbitrary amount of copies by nanoimprint lithography into plastic substrates. Therefore these lasers are very attractive even for single-use applications (e.g. in medicine and biotechnology). Today, the key challenge in the field is the realisation of the first electrically driven organic laser. Key pre-requisites are highly efficient amplifying material systems which allow for low threshold operation and charge transport materials that bring about the stability to sustain the necessary current densities, several orders of magnitude higher than in OLEDs. We will demonstrate diode structures operated electrically under pulsed conditions at current densities up to 760 A/cm2 with a product of the current density and the external quantum effciency (J×ηext) of 1.27 A/cm2. Mechanisms deteriorating the quantum efficieny at elevated current densities will be discussed.

Paper Details

Date Published: 17 November 2005
PDF: 15 pages
Proc. SPIE 6008, Nanosensing: Materials and Devices II, 60080Z (17 November 2005); doi: 10.1117/12.637436
Show Author Affiliations
W. Kowalsky, Technische Univ. Braunschweig (Germany)
T. Rabe, Technische Univ. Braunschweig (Germany)
D. Schneider, Technische Univ. Braunschweig (Germany)
H.-H. Johannes, Technische Univ. Braunschweig (Germany)
C. Karnutsch, Univ. Karlsruhe (Germany)
M. Gerken, Univ. Karlsruhe (Germany)
U. Lemmer, Univ. Karlsruhe (Germany)
J. Wang, Physikalisch Technische Bundesanstalt (Germany)
T. Weimann, Physikalisch Technische Bundesanstalt (Germany)
P. Hinze, Physikalisch Technische Bundesanstalt (Germany)
T. Riedl, Technische Univ. Braunschweig (Germany)

Published in SPIE Proceedings Vol. 6008:
Nanosensing: Materials and Devices II
M. Saif Islam; Achyut K. Dutta, Editor(s)

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