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Proceedings Paper

Endpoint detection development for 70 nm technology Cr etch process
Author(s): Pavel Nesladek; Andreas Wiswesser; Oliver Loffler
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Paper Abstract

For the last few years several different photoresists and Cr layers were used for mask making: -I line resist for 363.8 nm laser writer; -e-beam resist; -Positive CAR resist and DUV CAR resist. Introduction of a new resist into production has several risks associated with and requires process adjustments in litho and etch process likewise. This presentation will focus on the differences in the endpoint detection using optical emission spectroscopy (OES), especially at low Cr load, when using above mentioned photo resists. Development of the OES endpoint detection starting from single wavelength is shortly discussed and methods for endpoint detection at low Cr concentration in the gas phase caused by decreasing plasma power and increasing volume of the etch chamber are shown. An important factor for the practical use of the endpoint detection is the reliability, scalability for different Cr loads and dependence on the chamber seasoning. These factors will be discussed finally.

Paper Details

Date Published: 16 June 2005
PDF: 9 pages
Proc. SPIE 5835, 21st European Mask and Lithography Conference, (16 June 2005); doi: 10.1117/12.637274
Show Author Affiliations
Pavel Nesladek, Advanced Mask Technology Ctr. (Germany)
Andreas Wiswesser, Advanced Mask Technology Ctr. (Germany)
Oliver Loffler, Advanced Micro Devices, Inc. (Germany)

Published in SPIE Proceedings Vol. 5835:
21st European Mask and Lithography Conference
Uwe F. W. Behringer, Editor(s)

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