Proceedings Paper
Monolithic MSM photodetector/amplifier optical receiver on GaAs substrate| Format | Member Price | Non-Member Price |
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Paper Abstract
A monoli thi c opti cal rcei vex' consisting
of an MSM-PD and MESFET anp1ifiez' for
near 850nrn wavelength applications has
been designed and fabricated on GaAs
substrate. The parameters avaluated on
fabricated test structures such as 1pm
MESFET and MSM-PD were used as the model
parameters for receiver circuit simula
tion. The mesa epitaxial 1pm MESFET. technology
was used for receiver fabrication.
The receiver module characterized for
output response showed values close to the
simulated values of 3dB upper cut-off
frequency of 370MHz with a flat trazis impedance of 3.5KQ.
Paper Details
Date Published: 16 December 1992
PDF: 5 pages
Proc. SPIE 1622, Emerging Optoelectronic Technologies, (16 December 1992); doi: 10.1117/12.636973
Published in SPIE Proceedings Vol. 1622:
Emerging Optoelectronic Technologies
Krishna Shenai; Ananth Selvarajan; C. Kumar N. Patel; C. N. R. Rao; B. S. Sonde; Vijai K. Tripathi, Editor(s)
PDF: 5 pages
Proc. SPIE 1622, Emerging Optoelectronic Technologies, (16 December 1992); doi: 10.1117/12.636973
Show Author Affiliations
D. C. Dumka, Central Electronics Engineering Research Institute (India)
Mousumi Mazumdar, Central Electronics Engineering Research Institute (India)
Mousumi Mazumdar, Central Electronics Engineering Research Institute (India)
M. S. Yadav, Central Electronics Engineering Research Institute (India)
Babu Ram Singh, Central Electronics Engineering Research Institute (India)
Babu Ram Singh, Central Electronics Engineering Research Institute (India)
Published in SPIE Proceedings Vol. 1622:
Emerging Optoelectronic Technologies
Krishna Shenai; Ananth Selvarajan; C. Kumar N. Patel; C. N. R. Rao; B. S. Sonde; Vijai K. Tripathi, Editor(s)
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