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Proceedings Paper

Application of electron beam lithography to produce corrugated surface for DFB lasers
Author(s): P. R. Deshmukh; Mulayam Singh; Kamal Jit Rangra; W. S. Khokle; B. B. Pal
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Paper Abstract

For long wavelength single node DFB type laser devices it Is required to rrugate the surface of InP substrate in the form of lines (Grating) with spatial period In sub-half micron ng. Electron beam lithography (E2L) can be used to make such high resolutlon lines first in the resist and then these lines can be transferred to the substrate by suitable dry or wet etching process. In delineating such closely spaced lines In the resist which Is coated on a relatively high average atctnic number substrate ( At.No.32), the well known proximity exposure (PE) effect associated with EBL requires cxrrection • The paper discusses arid gives the simulation results which depict the effect of PE on the width and spacing of lines. A comparison Is made between the lines on the lower At.No. substrate Si, and high At.No. InP substrate. A proximity exposure compensation (PEC) scheme based on dose variation technique is found to provide just adequate correction to PE effect. The experimental results on the delineation of lines before and after correction show good agreement with the simulated results within experimental limitations.

Paper Details

Date Published: 16 December 1992
PDF: 5 pages
Proc. SPIE 1622, Emerging Optoelectronic Technologies, (16 December 1992); doi: 10.1117/12.636907
Show Author Affiliations
P. R. Deshmukh, Central Electronics Engineering Research Institute (India)
Mulayam Singh, Ceeri Dilani Ratasthan (India)
Kamal Jit Rangra, Central Electronics Engineering Research Institute (India)
W. S. Khokle, Central Electronics Engineering Research Institute (India)
B. B. Pal, Banaras Hindu Univ. (India)

Published in SPIE Proceedings Vol. 1622:
Emerging Optoelectronic Technologies
Krishna Shenai; Ananth Selvarajan; C. Kumar N. Patel; C. N. R. Rao; B. S. Sonde; Vijai K. Tripathi, Editor(s)

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