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Proceedings Paper

Photoluminescence on InP: effect of surfaces and interfaces
Author(s): T. K. Paul; D. N. Bose
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Paper Abstract

It has been shown that improved surface properties of InP could be achieved through HF and sulfide NaS. 9HO) treatments. The photoluminescence (PL) intensity was found to increase due to reduction in interface state density after chemical treatments. X-ray photo-electron spectroscopy (XPS) studies revealed that the formation of IflF3 and P2S3 after HF and sulfide treatment respectively are responsible for better interfacial behaviour. I.

Paper Details

Date Published: 16 December 1992
PDF: 4 pages
Proc. SPIE 1622, Emerging Optoelectronic Technologies, (16 December 1992); doi: 10.1117/12.636841
Show Author Affiliations
T. K. Paul, Indian Institute of Technology/Kharagpur (India)
D. N. Bose, Indian Institute of Technology/Kharagpur (India)

Published in SPIE Proceedings Vol. 1622:
Emerging Optoelectronic Technologies
Krishna Shenai; Ananth Selvarajan; C. Kumar N. Patel; C. N. R. Rao; B. S. Sonde; Vijai K. Tripathi, Editor(s)

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